Vishay Intertechnology, Inc. today introduced a new TrenchFET® 20 V n-channel MOSFET in the chipscale MICRO FOOT® 0.8 mm by 0.8 mm package with an ultra-thin 0.357 mm profile. Designed to save space, decrease power consumption, and extend battery usage in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices such as hearing aids, the Vishay Siliconix Si8824EDB claims the industry’s lowest on-resistance for any 20 V device with a 1 mm square or < 0.7 mm square outline.
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Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8824EDB features extremely low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. These ratings are up to 25% lower than the closest competing 20 V MOSFET in an identical CSP package, and up to 65% lower than the closest competing 20 V device in the DFN 1 mm by 0.6 mm package. The MOSFET’s 20 V VDS, ESD protection, ratings down to 1.2 V, and low on-resistance provide a combination of safety margin, gate drive design flexibility, and high performance for lithium-ion battery-powered applications.
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Samples and production quantities of the Si8824EDB are available now, with lead times of 14 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $0.16 per piece in 10,000-piece quantities.
source: http://www.powerpulse.net/story.php?storyID=32465
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