Trench-Type SiC MOSFET has 50% Lower On-Resistance _Industry news_ABOUT

2024-05-21 17:09:15 By admin Comments are Off

ROHM Co., Ltd. announced the development and mass production of an SiC MOSFET that adopts the world’s first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.

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ROHM’s latest offering is a SiC MOSFET featuring a trench structure that maximizes SiC characteristics, claiming a groundbreaking milestone with significant implications worldwide. Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. As a result, efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturization, lighter weight, and greater energy savings in a variety of equipment. And going forward ROHM is developing full SiC modules that integrate both SiC MOSFETs and SBDs.

Key Features: 1. Original trench structure utilized to achieve lower ON resistance. Although adopting a trench construction in SiC MOSFETs has been attracting increased attention due to its effectiveness in reducing ON resistance, there is a need to establish a structure for mitigating the electric field generated in the trench gate portion in order to guarantee long-term reliability. ROHM was able to meet this need and successfully mass-produce the industry’s first trench-type SiC MOSFETs by utilizing a proprietary structure. As a result, switching performance is improved (approx. 35% lower input capacitance) and ON resistance reduced by 50% over planar-type SiC MOSFETs.

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2. Full SiC power module development. ROHM has also developed a full SiC power module that incorporates these latest trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs. In addition, the 1200V/180A module features the same rated current as Si IGBT modules while reducing switching loss by approximately 42% vs. planar-type SiC MOSFETs.

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The product line up includes a full SiC power module and three discrete devices for each rated voltage: 650V and 1200V, with rated currents of 118A (650V) and 95A (1200V).

source: http://www.powerpulse.net/story.php?storyID=32372

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