GeneSiC Semiconductor announces the immediate availability of a 20-mΩ 1200-V SiC junction transistor and diodes in an isolated, 4-leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC transistors and rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, dc-dc converters, and switched mode power supplies.
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Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only wide bandgap switch offers >10 µsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low gate voltages, unlike other SiC switches.
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“GeneSiC’s SiC transistor and rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-bridge, flyback and multi-level inverters” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
Product released today include a 20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227): Isolated SOT-227/mini-block/Isotop package; Transistor Current Gain (hFE) >100; Tjmax = 175oC (limited by packaging); and Turn On/Off; Rise/Fall Times <10 nanoseconds typical.
source: http://www.powerpulse.net/story.php?storyID=32209
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