Fairchild Semiconductor claims to be slashing energy loss by 30 percent for its 4th generation 650V and 1200V IGBT devices. Using a novel design approach tailored for high and medium/speed switching applications in industrial and automotive markets, Fairchild can deliver industry-leading levels of performance with very strong latch up immunity for superior ruggedness and reliability. Fairchild is demonstrating and presenting the approach with test results of several applications at PCIM Europe 2015.
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“Manufacturers are extremely interested in more advanced IGBTs as any reduction in an IGBT’s switching loss will enable them to improve the efficiency of their products,” said Senior IHS Analyst Victoria Fodale. “Minimizing power losses is naturally key to attaining the highest levels of efficiency in a range of applications from electric vehicles and solar power systems, to highly-efficient HVAC applications and industrial inverters.”
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“Fairchild’s new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure,” said Fairchild Fellow Thomas Neyer. “These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs.”
Fairchild Design Leader Kevin Lee will present “4th Generation Field Stop (FS) IGBT with High Performance and Enhanced Latch up Immunity” at 1 p.m. on Thursday, May 21, in the Nuremberg Exhibition Center’s Industry Forum Hall 6, booth 345. Product family details for Fairchild FS4 IGBT’s will be made available in Q4 of 2015.
source: http://www.powerpulse.net/story.php?storyID=32245
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