Raytheon UK‘s semiconductor business unit in Glenrothes, Scotland, has been selected by a leading automotive manufacturer to develop a Silicon Carbide (SiC) based MOSFET for use in electric, hybrid-electric and plug-in hybrid electric vehicles. As experts in the development of components and modules intended for safety-critical applications within harsh environments, Raytheon will employ its extensive SiC fabrication expertise to develop a MOSFET, rated at 650V/60A, which can be mass-produced cost-effectively and be fully compliant with the stringent ISO/TS 16949 automotive quality standard.
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John Kennedy, head of Raytheon UK’s Integrated Power Solutions, comments: “The use of Silicon Carbide overcomes many of the problems restricting the use of traditional Silicon semiconductor devices, for certain applications, within electric vehicles and their hybrid derivatives. The benefits of Silicon Carbide include higher temperature operation, low switching losses and low parasitics – making possible the production of reliable, high power devices in small and lightweight packages that do not have the same cooling requirements as Silicon-based components.”
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Kennedy adds: “We were selected for this particular MOSFET project because of our Silicon Carbide expertise, proven processes and project management skills, all of which combine to produce a reduced risk engagement for the customer. Moreover, we’re an established fabricator of semiconductor devices for automotive power and control applications, using either Silicon Carbide or traditional Silicon. The development of the 650V/60A MOSFET is a multiphase project, and early results are promising.”
source: http://www.powerpulse.net/story.php?storyID=31194
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